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Part Number:FF75R12YT3BOMA1
Manufacturer:Infineon
Category:IGBT Modules
Availability:2663
Description:Trans IGBT Module N-CH 1200V 100A 345000mW Tray
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Detailed Product Description
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status NRND
Automotive No
PPAP No
Channel Type N
Configuration Dual
Typical Collector Emitter Saturation Voltage (V) 1.8
Maximum Collector-Emitter Voltage (V) 1200
Maximum Power Dissipation (mW) 345000
Maximum Gate Emitter Voltage (V) ±20
Maximum Continuous Collector Current (A) 100
Maximum Gate Emitter Leakage Current (uA) 0.4
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 125
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