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> BSM15GD120DN2E3224BOSA1
Part Number: BSM15GD120DN2E3224BOSA1
Manufacturer:
Infineon
Category:
IGBT Modules
Availability:
2185
Description:
Trans IGBT Module N-CH 1200V 25A 145000mW
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BSM15GD120DN2E3224BOSA1
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BSM15GD120DN2E3224BOSA1 Datasheet PDF Specification
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
LTB
Automotive
No
PPAP
No
Channel Type
N
Configuration
Hex
Typical Collector Emitter Saturation Voltage (V)
2.5
Maximum Collector-Emitter Voltage (V)
1200
Maximum Power Dissipation (mW)
145000
Maximum Gate Emitter Voltage (V)
±20
Maximum Continuous Collector Current (A)
25
Maximum Gate Emitter Leakage Current (uA)
0.15
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
,
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
LTB
Automotive
No
PPAP
No
Channel Type
N
Configuration
Hex
Typical Collector Emitter Saturation Voltage (V)
2.5
Maximum Collector-Emitter Voltage (V)
1200
Maximum Power Dissipation (mW)
145000
Maximum Gate Emitter Voltage (V)
±20
Maximum Continuous Collector Current (A)
25
Maximum Gate Emitter Leakage Current (uA)
0.15
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
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KYOCERAAVX Components
3M
Littelfuse
Microchip Technology
Micron Technology
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Molex
Murata Manufacturing
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NVIDIA Corporation
NXP Semiconductors
onsemi
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