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Home > Products > Infineon > BSM35GD120DN2E3224BOSA1
Part Number: BSM35GD120DN2E3224BOSA1
Manufacturer:
Infineon
Category:
IGBT Modules
Availability:
8676
Description:
Trans IGBT Module N-CH 1200V 50A 280000mW 17-Pin ECONO2-2
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BSM35GD120DN2E3224BOSA1 Datasheet PDF Specification
ECCN (US) EAR99
Part Status Unconfirmed
Automotive No
PPAP No
Channel Type N
Configuration Hex
Typical Collector Emitter Saturation Voltage (V) 2.7
Maximum Collector-Emitter Voltage (V) 1200
Maximum Power Dissipation (mW) 280000
Maximum Gate Emitter Voltage (V) ±20
Maximum Continuous Collector Current (A) 50
Maximum Gate Emitter Leakage Current (uA) 0.15
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package ECONO2-2
Pin Count 17
Mounting Screw
Package Height 17
Package Length 107.5
Package Width 45
PCB changed 17
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