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Part Number: SST12CP11C
Manufacturer:
Microchip
Category:
Wireless
Availability:
2524
Description:
High Gain:- Typically 37 dB gain across 2.4–2.5 GHz over temperature -20°C to +85°C>30 dBm P1dBMeets 802.11g OFDM spectrum mask requirement up to 28 dBmMeets 802.11b ACPR requirement up to 28 dBmTypically 25 dBm with <3% EVM, 802.11g,54 MbpsTypically 24 dBm with <2.5% EVM, 802.11n,MCS7-HT20, 50% duty cycleTypically 24 dBm with <1.75% EVM, MCS9HT40,50% duty cycle Packages available- 16-contact UQFN (3mm x 3mm)- Pin-to-pin compatible with SST12CP11-Applications WLAN (IEEE 802.11b/g/n) WLAN 256 QAM AP router WiMax (IEEE 802.16e) Home RF Cordless phones 2.4 GHz ISM wireless equipment
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SST12CP11C Datasheet PDF Specification
SST12CP11C is a high-power and high-gain power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology. This PA can be easily configured for high-power applications with high power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 37 dB gain with 25% power-added efficiency @ POUT = 28 dBm for 802.11g. SST12CP11C has excellent linearity, typically 25 dBm at 3% EVM with 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 28 dBm. SST12CP11C also has a single-ended power detector which lowers the users’ cost for power control. SST12CP11C is offered in 16-contact UQFN package.
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